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Hall Effect Elements GaAs and InSb Series
CYSJ series Hall-effect element is a ion-implanted magnetic field sensor made of mono-crystal gallium arsenide (GaAs) semiconductor material group ċ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.
CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output.
Hall Effect Elements GaAs and InSb Series (PDF file)
CYTY Series Hall Effect Elements (PDF file)
CYTY101A Hall Effect Element (PDF file)
CYSJ Series Hall Effect Elements (PDF file)
CYSJ119 Hall Effect Element (PDF file)
CYSJ1069 Hall Effect Element (PDF file)
| P/N (Part Number) | Sensitivity Range(mT) | Material | Operate Mode | Packages |
| CYSJ119 | 80-200(5mV,100mT) | GaAs | Constant Current 5mA | TO-94 |
| CYSJ411 | 80-200(5mV,100mT) | GaAs | Constant Current 5mA | SOT-143 |
| CYSJ422 | 80-200(5mV,100mT) | GaAs | Constant Current 5mA | See data sheet |
| CYSJ1069 | 80-200(5mV,100mT) | GaAs | Constant Current 5mA | See data sheet |
| CYSJ124 | 30 (5V,100mT) | GaAs | Constant Current 5mA | See data sheet |
| CYTY320 | 30-75(1V,50mT) | InSb | Constant Voltage 1.5V | See data sheet |
| CYTY300B-CS | 30-75(1V,50mT) | InSb | Constant Voltage 1.5V | TO-94 |
| CYTY101A | 30-75(1V,50mT) | InSb | Constant Voltage 1.5V | SOT-143 |
| CYTY211 | 30-75(1V,50mT) | InSb | Constant Voltage 1.5V | SOT-143 |